Table 1

Parameters of minizone transport in silicon carbide polytypes
SiC poly-type Ftfor the Bloch oscillation of electrons, (105V/cm) Ftfor the Stark-phonon resonance, (106V/cm) Ftfor complete localization of the first electron miniband, (106V/cm) Ftfor resonance tunneling of electrons between the first and second (106V/cm) The width of the first electron miniband E1(meV) The gap between the first and second minibands E1,2(meV) Saturated velocity Vsof electrons in the first miniband FC,(cm/s)
4H 2.9 [18] 1.6,
2.0 [22] ≈ 500 3.3 × 106[24]
6H 1.5 [18] 0.6, 1.1,
1.37 [22] 1.8 [22] 1.9 [22] 260 [22] 176 [22] 2.0 × 106[24]
8H 1.1 [18] ≈ 140 1.0 × 106[24]
15R 1.2 × 106[24]
21R 4.4 × 103[23]

Parameters of minizone transport in silicon carbide polytypes. Here, Ft is the threshold field, and (Est.) means an approximate estimation made on the basis of the experimental value of E1 for the 6H-SiC polytype and taking into account the fact that <a onClick="popup('http://www.nanoscalereslett.com/content/7/1/560/mathml/M3','MathML',630,470);return false;" target="_blank" href="http://www.nanoscalereslett.com/content/7/1/560/mathml/M3">View MathML</a>, where kd = ħ/d and d is the NSL period. F, electric field. Ft, threshold electric field.

Sankin et al.

Sankin et al. Nanoscale Research Letters 2012 7:560   doi:10.1186/1556-276X-7-560

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