## Table 1 |
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Parameters of minizone transport in silicon carbide polytypes |
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SiC poly-type |
F_{t}for the Bloch oscillation of electrons, (10^{5}V/cm) |
F_{t}for the Stark-phonon resonance, (10^{6}V/cm) |
F_{t}for complete localization of the first electron miniband, (10^{6}V/cm) |
F_{t}for resonance tunneling of electrons between the first and second (10^{6}V/cm) |
The width of the first electron miniband E_{1}(meV) |
The gap between the first and second minibands E_{1,2}(meV) |
Saturated velocity V_{s}of electrons in the first miniband F∥C,(cm/s) |

4H | 2.9 [18] | 1.6, | |||||

2.0 [22] | ≈ 500 | 3.3 × 10^{6}[24] |
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6H | 1.5 [18] | 0.6, 1.1, | |||||

1.37 [22] | 1.8 [22] | 1.9 [22] | 260 [22] | 176 [22] | 2.0 × 10^{6}[24] |
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8H | 1.1 [18] | ≈ 140 | 1.0 × 10^{6}[24] |
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15R | 1.2 × 10^{6}[24] |
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21R | 4.4 × 10^{3}[23] |

Parameters of minizone transport in silicon carbide polytypes. Here, *F*_{t} is the threshold field, and (Est.) means an approximate estimation made on the basis
of the experimental value of *E*_{1} for the 6H-SiC polytype and taking into account the fact that
, where *k*_{d }=* ħ*/*d *and d is the NSL period. *F*, electric field. *F*_{t}, threshold electric field.

Sankin * et al.*

Sankin * et al.* *Nanoscale Research Letters* 2012 **7**:560 doi:10.1186/1556-276X-7-560