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Open Access Nano Express

Probability of twin formation on self-catalyzed GaAs nanowires on Si substrate

Masahito Yamaguchi*, Ji-Hyun Paek and Hiroshi Amano

Author Affiliations

Department of Electrical Engineering and Computer Science, Nagoya University, C3-1 Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan

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Nanoscale Research Letters 2012, 7:558  doi:10.1186/1556-276X-7-558

Published: 8 October 2012

Abstract

We attempted to control the incorporation of twin boundaries in self-catalyzed GaAs nanowires (NWs). Self-catalyzed GaAs NWs were grown on a Si substrate under various arsenic pressures using molecular beam epitaxy and the vapor-liquid-solid method. When the arsenic flux is low, wurtzite structures are dominant in the GaAs NWs. On the other hand, zinc blende structures become dominant as the arsenic flux rises. We discussed this phenomenon on the basis of thermodynamics and examined the probability of twin-boundary formation in detail.

Keywords:
GaAs nanowire; Molecular beam epitaxy; Vapor-liquid-solid; Twin boundary; Supersaturation; Wurtzite; zinc blende