Probability of twin formation on self-catalyzed GaAs nanowires on Si substrate
Department of Electrical Engineering and Computer Science, Nagoya University, C3-1 Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan
Nanoscale Research Letters 2012, 7:558 doi:10.1186/1556-276X-7-558Published: 8 October 2012
We attempted to control the incorporation of twin boundaries in self-catalyzed GaAs nanowires (NWs). Self-catalyzed GaAs NWs were grown on a Si substrate under various arsenic pressures using molecular beam epitaxy and the vapor-liquid-solid method. When the arsenic flux is low, wurtzite structures are dominant in the GaAs NWs. On the other hand, zinc blende structures become dominant as the arsenic flux rises. We discussed this phenomenon on the basis of thermodynamics and examined the probability of twin-boundary formation in detail.