Figure 5.

Cross-sectional SEM images of silicon samples. (a) Etched in the solution containing 4.6 M HF, 0.02 M AgNO3, and 0.005 M KMnO4 for 45 min. (b) Cross-sectional SEM images of n-Si(100) with the resistivity of 3 cmto 5 Ω·cm etched in the solution containing 4.6 M HF, 0.02 M AgNO3, and 0.05 M KMnO4 for 45 min.

Bai et al. Nanoscale Research Letters 2012 7:557   doi:10.1186/1556-276X-7-557
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