Figure 3.

Surface morphology. The silicon sample etched in the solution containing 4.6 M HF, 0.02 M AgNO3, and 0.05 M KMnO4 for 45 min (a) before cleaning by deionized water and (b) after cleaning by deionized water. (c) EDX spectrum and (d) XRD spectra corresponding to (b), respectively.

Bai et al. Nanoscale Research Letters 2012 7:557   doi:10.1186/1556-276X-7-557
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