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Scanning X-ray nanodiffraction: from the experimental approach towards spatially resolved scattering simulations

Martin Dubslaff1*, Michael Hanke1, Jens Patommel2, Robert Hoppe2, Christian G Schroer2, Sebastian Schöder3 and Manfred Burghammer3

Author Affiliations

1 , Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, Berlin, D-10117, Germany

2 , Technische Universität Dresden, Institut für Strukturphysik, Zellescher Weg 16, Dresden, D-01069, Germany

3 , European Synchrotron Radiation Facility, Grenoble Cedex, F-38043, BP 220, France

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Nanoscale Research Letters 2012, 7:553  doi:10.1186/1556-276X-7-553

Published: 6 October 2012


An enhancement on the method of X-ray diffraction simulations for applications using nanofocused hard X-ray beams is presented. We combine finite element method, kinematical scattering calculations, and a spot profile of the X-ray beam to simulate the diffraction of definite parts of semiconductor nanostructures. The spot profile could be acquired experimentally by X-ray ptychography. Simulation results are discussed and compared with corresponding X-ray nanodiffraction experiments on single SiGe dots and dot molecules.

Quantum dots; Quantum dot molecules; X-ray nanodiffraction; X-ray scattering simulation; 68.65.Hb; 61.05.C-