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Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice

Mikhail Sobolev*, Mikhail Buyalo, Idris Gadzhiev, Ilya Bakshaev, Yurii Zadiranov and Efim Portnoi

Author affiliations

Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

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Citation and License

Nanoscale Research Letters 2012, 7:545  doi:10.1186/1556-276X-7-545

Published: 2 October 2012


Passive mode-locking is achieved in two sectional lasers with an active layer based on superlattice formed by ten layers of quantum dots. Tunnel coupling of ten layers changes the structural polarization properties: the ratio between the transverse electric and transverse magnetic polarization absorption coefficients is less by a factor of 1.8 in the entire electroluminescence spectrum range for the superlattice.

Mode-locking; Laser; Polarization; Quantum dots; Superlattice; In(Ga) As/GaAs