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Three-dimensional AlZnO/Al2O3/AlZnO nanocapacitor arrays on Si substrate for energy storage

Lian-Jie Li1, Bao Zhu1, Shi-Jin Ding1*, Hong-Liang Lu1, Qing-Qing Sun1, Anquan Jiang1, David Wei Zhang1 and Chunxiang Zhu2

Author Affiliations

1 State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China

2 Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260, Singapore

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Nanoscale Research Letters 2012, 7:544  doi:10.1186/1556-276X-7-544

Published: 2 October 2012


High density three-dimensional AZO/Al2O3/AZO nanocapacitor arrays have been fabricated for energy storage applications. Using atomic layer deposition technique, the stack of AZO/Al2O3/AZO has been grown in the porous anodic alumina template which is directly formed on the Si substrate. The fabricated capacitor shows a high capacitance density of 15.3 fF/μm2 at 100 kHz, which is nearly 2.5 times over the planar capacitor under identical conditions in theory. Further, the charge-discharge characteristics of the capacitor are characterized, indicating that the resistance-capacitance time constants are equal to 300 ns for the charging and discharging processes, and have no dependence on the voltage supply. This reflects good power characteristics of the electrostatic capacitor.

Nanocapacitor arrays; AAO; Capacitance density; RC time constant; Energy storage