Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method
1 Department of Ceramic Engineering, Engineering Research Institute, Gyeongsang National University, Jinju-Si, 660-701, South Korea
2 Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 139-701, South Korea
Nanoscale Research Letters 2012, 7:54 doi:10.1186/1556-276X-7-54Published: 5 January 2012
In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2.