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Inelastic light scattering by 2D electron system with SO interaction

Alexander V Chaplik12, Lev I Magarill12* and Ritta Z Vitlina1

Author Affiliations

1 Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, 630090, Russia

2 Novosibirsk State University, Novosibirsk, 630090, Russia

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Nanoscale Research Letters 2012, 7:537  doi:10.1186/1556-276X-7-537

Published: 28 September 2012


Inelastic light scattering by electrons of a two-dimensional system taking into account the Rashba spin-orbit interaction (SOI) in the conduction band is theoretically investigated. The case of resonance scattering (frequencies of incident and scattered light are close to the effective distance between conduction and spin-split-off bands of the AIIIBV-type semiconductor) is considered. As opposed to the case of SOI absence, the plasmon peak in the scattering occurs even at strictly perpendicular polarizations of the incident and scattered waves. Under definite geometry, one can observe the spectrum features conditioned by only single-particle transitions. In the general case of elliptically polarized incident and scattered light, the amplitude of the plasmon peak turns out to be sensitive to the sign of the SOI coupling.

Two-dimensional system; Inelastic light scattering; Spin-orbit interaction; Rashba model