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Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation

Shengqiang Zhou1*, Wenxu Zhang2*, Artem Shalimov1, Yutian Wang13, Zhisuo Huang2, Danilo Buerger1, Arndt Mücklich1, Wanli Zhang2, Heidemarie Schmidt4 and Manfred Helm13

Author Affiliations

1 Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510119, Dresden, 01314, Germany

2 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China

3 Technische Universität Dresden, Dresden, 01062, Germany

4 Fakultät Elektrotechnik und Informationstechnik, Materialsysteme der Nanoelektronik, Technische Universität Chemnitz, Chemnitz, 09107, Germany

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Nanoscale Research Letters 2012, 7:528  doi:10.1186/1556-276X-7-528

Published: 25 September 2012


The integration of ferromagnetic Mn5Ge3 with the Ge matrix is promising for spin injection in a silicon-compatible geometry. In this paper, we report the preparation of magnetic Mn5Ge3 nanocrystals embedded inside the Ge matrix by Mn ion implantation at elevated temperature. By X-ray diffraction and transmission electron microscopy, we observe crystalline Mn5Ge3 with variable size depending on the Mn ion fluence. The electronic structure of Mn in Mn5Ge3 nanocrystals is a 3d6 configuration, which is the same as that in bulk Mn5Ge3. A large positive magnetoresistance has been observed at low temperatures. It can be explained by the conductivity inhomogeneity in the magnetic/semiconductor hybrid system.

Mn5Ge3; Ion implantation; Magnetic nanocrystals; Magnetoresistance