Gain studies of 1.3-μm dilute nitride HELLISH-VCSOA for optical communications
1 School of Computer Science and Electronic Engineering, University of Essex, Colchester CO4 3SQ, UK
2 Department of Physics, Faculty of Science and Health, University of Koya, Koya, KO50 1001, Iraq
Nanoscale Research Letters 2012, 7:526 doi:10.1186/1556-276X-7-526Published: 25 September 2012
The hot electron light emitting and lasing in semiconductor heterostructure-vertical-cavity semiconductor optical amplifier (HELLISH-VCSOA) device is based on Ga0.35In0.65 N0.02As0.08/GaAs material for operation in the 1.3-μm window of the optical communications. The device has undoped distributed Bragg reflectors (DBRs). Therefore, problems such as those associated with refractive index contrast and current injection, which are common with doped DBRs in conventional VCSOAs, are avoided. The gain versus applied electric field curves are measured at different wavelengths using a tunable laser as the source signal. The highest gain is obtained for the 1.3-μm wavelength when an electric field in excess of 2 kV/cm is applied along the layers of the device.