Table 1

Epitaxial structure of the THH-VCSOA
Repetition Material Layer thickness (Å) Dopants Concentration/cm3
6 GaAs 956 Undoped -
AlAs 1,113
1 GaAs 1,500 C 1 × 1017
11 GaAs 100 Undoped -
GaInNAs 60
GaAs 100
1 GaAs 1,500 Si 1 × 1017
1 AlAs 1,113 n-doped 1 × 1017
GaAs 956
19 AlAs 1,113 Undoped -
GaAs 956
1 AlAs 1,113
Semi-insulating GaAs substrate

Chaqmaqchee et al.

Chaqmaqchee et al. Nanoscale Research Letters 2012 7:525   doi:10.1186/1556-276X-7-525

Open Data