www.nanoscalereslett.com

Table 1
Epitaxial structure of the THH-VCSOA
Repetition	Material	Layer thickness (Å)	Dopants	Concentration/cm³
6	GaAs	956	Undoped	-
	AlAs	1,113
1	GaAs	1,500	C	1 × 10¹⁷
11	GaAs	100	Undoped	-
	GaInNAs	60
	GaAs	100
1	GaAs	1,500	Si	1 × 10¹⁷
1	AlAs	1,113	n-doped	1 × 10¹⁷
	GaAs	956
19	AlAs	1,113	Undoped	-
	GaAs	956
1	AlAs	1,113
Semi-insulating GaAs substrate

Chaqmaqchee et al. Nanoscale Research Letters 2012 7:525 doi:10.1186/1556-276X-7-525

Table 1