Figure 2.

The modified THH-VCSOA device. Schematic diagram to illustrate (a) the THH-VCSOA structure and its contact configuration and (b) the potential distributions of the device along the p-channel (broken line) and n-channel (solid line). In the region of Vp > Vn, the device is forward-biased, while in the region of Vn > Vp, the device is reverse-biased.

Chaqmaqchee et al. Nanoscale Research Letters 2012 7:525   doi:10.1186/1556-276X-7-525
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