Table 3

Resonant frequencies of inductors integrated on PS and other substrates
Inductor characteristics fr(GHz)
Inductor design L(nH) Glass 3-kΩ cm Si 20-mΩ cm Si 200-μm full PS sheet 100-μm full PS sheet
W10N55R30 5.3 15.8 15.3 15.6 15.3 -
W50N15R78 1.2 16.7 17 8.3 17 18.2
W50N35R30 3.5 6.5 6.4 4 6.5 7
W50N55R175 21 1.75 1.7 0.7 - 2.1
W10N55R80 10.2 10 9 2 10.5 -
W30N35R130 7 14.5 14 5.11 14.5 -

Resonant frequencies (fr) of inductors integrated on PS and other substrates. Similar fr were obtained with full PS sheet, glass and high-resistivity silicon. fr is increased with the PS substrate with regard to highly doped silicon. fr, resonant frequency.

Capelle et al.

Capelle et al. Nanoscale Research Letters 2012 7:523   doi:10.1186/1556-276X-7-523

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