Table 2

Qmax (fQmax) of inductors integrated on localized PS and other usual substrates
Inductor design Qmax (fQmax) (GHz)
3-kΩ cm Si 20-mΩ cm Si 100-μm PS 200-μm PS 100-μm localized PS 200-μm localized PS Glass
W10N55R30 3.8 (2.6) 1.8 (1) 7.2 (4.7) 8.7 (5.4) 4.7( 2.6) 6.9 (3.4) 8.3 (5.5)
W10N55R80 3.1 (1.6) 1.5 (0.6) 6.3 (3) 7.8 (3.2) 5.3 (2.3) - 7.8 (3.76)
W30N15R80 9.9 (5.6) 3.6 (1.5) 12.1(8.4) 22 (12) 9.1 (4.2) 12.4 (5.3) 23 (13)
W30N35R130 2.7 (1.7) 1.6 (7.6) 6.3(3.7) 7.7 (4) 4.1 (2.2) 4.1 (1.9) 8.7 (4.5)
W30N55R30 3.5 (9.6) 1.7 (0.3) 5.5 (1.7) 6.6 (2) 4.3 (1.2) 4.5 (1.3) 6.9 (2.15)
W50N15R78 8.8 (4.3) 3.41 (1) 10.6 (6.6) 17.5 (8) 9.4 (3.8) 11 (4.6) 18.7 (7.8)
W50N55R175 2.4 (0.3) 1.2 (0.1) 3.8 (0.6) - 3.11 (7.1) - 5.7 (0.9)

Comparison of Qmax obtained with several inductors integrated on localized PS, full PS sheet and common substrates used for radiofrequency applications. Better Qmax were obtained with 200-μm localized PS than with highly doped and high-resistivity silicon bulk. PS, porous silicon; Qmax, maximum Q factors; fQmax, frequency for the one Qmax.

Capelle et al.

Capelle et al. Nanoscale Research Letters 2012 7:523   doi:10.1186/1556-276X-7-523

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