Figure 7.

Resonant frequency measured on common and PS substrates. Variation of the inductance value (L12) with frequency for a W50N35R30 inductor integrated on various substrates. Except for highly doped silicon substrates, fr between 6 and 7 GHz are obtained.

Capelle et al. Nanoscale Research Letters 2012 7:523   doi:10.1186/1556-276X-7-523
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