Figure 2.

Evolution of the warp with the PS thickness. Influence of the PS thickness on the warp of 6-in. p-type silicon (ρ = 20 mΩ cm). Measurements were conducted after the anodization and annealing processes. The surface of the substrate was totally anodized. PS layers had average 50% porosity. The annealing was run for 1 h under N2 at 300C.

Capelle et al. Nanoscale Research Letters 2012 7:523   doi:10.1186/1556-276X-7-523
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