RF performances of inductors integrated on localized p+-type porous silicon regions
1 Université François Rabelais de Tours, GREMAN, UMR CNRS 7347, 16 Rue Pierre et Marie Curie, BP 7155, Tours, Cedex 2, 37071, France
2 STMicroelectronics, 16 rue Pierre et Marie Curie, BP 7155, Tours, Cedex 2, 37071, France
Nanoscale Research Letters 2012, 7:523 doi:10.1186/1556-276X-7-523Published: 25 September 2012
To study the influence of localized porous silicon regions on radiofrequency performances of passive devices, inductors were integrated on localized porous silicon regions, full porous silicon sheet, bulk silicon and glass substrates. In this work, a novel strong, resistant fluoropolymer mask is introduced to localize the porous silicon on the silicon wafer. Then, the quality factors and resonant frequencies obtained with the different substrates are presented. A first comparison is done between the performances of inductors integrated on same-thickness localized and full porous silicon sheet layers. The effect of the silicon regions in the decrease of performances of localized porous silicon is discussed. Then, the study shows that the localized porous silicon substrate significantly reduces losses in comparison with high-resistivity silicon or highly doped silicon bulks. These results are promising for the integration of both passive and active devices on the same silicon/porous silicon hybrid substrate.