Size-selected growth of transparent well-aligned ZnO nanowire arrays
1 State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People’s Republic of China
2 School of Physics and Electronic Information Engineering, Shaanxi University of Technology, Hanzhong, 723000, People’s Republic of China
Nanoscale Research Letters 2012, 7:517 doi:10.1186/1556-276X-7-517Published: 21 September 2012
This paper reports the effect of precursor concentration, growth temperature, and growth time on the size and density of ZnO nanowire arrays (ZNAs). The well-aligned ZNAs were grown on indium tin oxide substrate using a facile chemical bath deposition method. The results showed that the ZnO nanowires could be tailored to the desired sizes with a simple variation of the growth parameters. Optical transmission spectra revealed a sufficient transparency of the ZNAs, qualifying them for photovoltaic and other optoelectronic applications. An inverted hybrid solar cell was fabricated using the ZNAs as the electron collecting layer, and the solar cell exhibited a power conversion efficiency of 0.91%.