Spin accumulation assisted by the Aharonov-Bohm-Fano effect of quantum dot structures
1 College of Sciences, Northeastern University, Shenyang, 110819, China
2 Department of Physics, Liaoning University, Shenyang, 110036, China
3 International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang, 110016, China
Nanoscale Research Letters 2012, 7:510 doi:10.1186/1556-276X-7-510Published: 17 September 2012
We investigate the spin accumulations of Aharonov-Bohm interferometers with embedded quantum dots by considering spin bias in the leads. It is found that regardless of the interferometer configurations, the spin accumulations are closely determined by their quantum interference features. This is mainly manifested in the dependence of spin accumulations on the threaded magnetic flux and the nonresonant transmission process. Namely, the Aharonov-Bohm-Fano effect is a necessary condition to achieve the spin accumulation in the quantum dot of the resonant channel. Further analysis showed that in the double-dot interferometer, the spin accumulation can be detailedly manipulated. The spin accumulation properties of such structures offer a new scheme of spin manipulation. When the intradot Coulomb interactions are taken into account, we find that the electron interactions are advantageous to the spin accumulation in the resonant channel.