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Direct bandgap materials based on the thin films of Se x Te100 − x nanoparticles

Numan Salah1*, Sami S Habib1 and Zishan H Khan2

Author Affiliations

1 Center of Nanotechnology, King Abdulaziz University, Jeddah, 21589, Saudi Arabia

2 Department of Applied Sciences, Faculty of Engineering and Technology, Jamia Millia Islamia (Central University), New Delhi, 110025, India

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Nanoscale Research Letters 2012, 7:509  doi:10.1186/1556-276X-7-509

Published: 15 September 2012


In this study, we fabricated thin films of SexTe100 − x (x = 0, 3, 6, 9, 12, and 24) nanoparticles using thermal evaporation technique. The results obtained by X-ray diffraction show that the as-synthesized nanoparticles have polycrystalline structure, but their crystallinity decreases by increasing the concentration of Se. They were found to have direct bandgap (Eg), whose value increases by increasing the Se content. These results are completely different than those obtained in the films of SexTe100 − x microstructure counterparts. Photoluminescence and Raman spectra for these films were also demonstrated. The remarkable results obtained in these nanoparticles specially their controlled direct bandgap might be useful for the development of optical disks and other semiconductor devices.

SexTe100 − x; Nanoparticles; Direct energy bandgap; Photoluminescence; Raman spectroscopy