Figure 8.

Si 2pXPS spectra of as-deposited and 1,000°Cannealed samples. Surface layer (approximately 50 nm) is removed before characterization to eliminate the surface oxidation effect (initial sample thickness was 150 nm). After annealing, the Si 2p peak is shifted towards a higher energy, which indicates the increment of Si-C bond density.

Moon et al. Nanoscale Research Letters 2012 7:503   doi:10.1186/1556-276X-7-503
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