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Metallic conduction and large electron-phonon-impurity interference effect in single TiSi nanowires

Wei-Che Hsu1, Chao-Chun Chen1, Yong-Han Lin1*, Huang-Kai Lin2, Hsin-Tien Chiu2 and Juhn-Jong Lin13*

Author Affiliations

1 Institute of Physics, National Chiao Tung University, Hsinchu, 30010, Taiwan

2 Department of Applied Chemistry, National Chiao Tung University, Hsinchu, 30010, Taiwan

3 Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan

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Nanoscale Research Letters 2012, 7:500  doi:10.1186/1556-276X-7-500

Published: 5 September 2012


We report on the first electrical characterizations of single-crystalline TiSi nanowires (NWs) synthesized by chemical vapor deposition reactions. By utilizing the focused-ion-beam-induced deposition technique, we have delicately made four-probe contacts onto individual NWs. The NW resistivities have been measured between 2 and 300 K, which reveal overall metallic conduction with small residual resistivity ratios in the NWs. Surprisingly, we find that the effect due to the interference processes between the elastic electron scattering and the electron-phonon scattering largely dominates over the usual Boltzmann transport even at room temperature. Such prominent electron-phonon-impurity interference effect is ascribed to the presence of large amounts of disorder and high Debye temperatures in TiSi NWs.

Chemical vapor deposition reaction; TiSi nanowire; Silicide; Electron-phonon scattering; Electron-phonon-impurity interference; Focused-ion-beam-induced deposition