Figure 7.

Measured responsivity and detectivity. As a function of applied bias for Ge/Si QDIPs in which the sheet boron density in the δ-doping layers was varied from 4 × 1011 to 12 × 1011cm−2. All devices have a top doping configuration with d = 5 nm.

Yakimov et al. Nanoscale Research Letters 2012 7:494   doi:10.1186/1556-276X-7-494
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