Figure 6.

Measured responsivity and detectivity. As a function of applied bias for Ge/Si QDIPs in which the distance between the δ-doping layer and the QD plane d was varied from 2 to 10 nm. All devices have a top doping configuration with pB = 8 × 1011cm−2.

Yakimov et al. Nanoscale Research Letters 2012 7:494   doi:10.1186/1556-276X-7-494
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