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Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature

Mohamed Benyoucef1*, Verena Zuerbig1, Johann Peter Reithmaier1, Tim Kroh2, Andreas W Schell2, Thomas Aichele2 and Oliver Benson2

Author Affiliations

1 Institute of Nanostructure Technologies and Analytics (INA), CINSaT, University of Kassel, Heinrich-Plett-Strasse 40, Kassel, 34132, Germany

2 Nano-Optik, Humboldt-Universität zu Berlin, Newtonstrasse 15, Berlin, 12489, Germany

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Nanoscale Research Letters 2012, 7:493  doi:10.1186/1556-276X-7-493

Published: 31 August 2012


The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function.

III-V semiconductors; Quantum dots; Droplet epitaxy; Single-photon emission; Radiative lifetime; 87.57.uh; 78.67.Hc; 78.55.-m; 42.50.-p