Figure 5.

Binding energy of heavy-hole exciton in a In0.2Ga0.8N-GaN QW. As a function of the applied electric field for several values of the quantum well-width (L) with α0 = 3L/4.

Duque et al. Nanoscale Research Letters 2012 7:492   doi:10.1186/1556-276X-7-492
Download authors' original image