|
Resolution: standard / high Figure 5.
Binding energy of heavy-hole exciton in a In0.2Ga0.8N-GaN QW. As a function of the applied electric field for several values of the quantum well-width
(L) with
α0 = 3L/4.
Duque et al. Nanoscale Research Letters 2012 7:492 doi:10.1186/1556-276X-7-492 |
