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Resolution: standard / high Figure 4.
Binding energy of heavy-hole exciton in a In0.2Ga0.8N-GaN QW. As a function of the applied electric field with L = 200Å and several values of the ILF-parameter.
Duque et al. Nanoscale Research Letters 2012 7:492 doi:10.1186/1556-276X-7-492 |
