|
Resolution: standard / high Figure 3.
Binding energy of heavy-hole exciton in a In0.2Ga0.8N-GaN QW. As a function of the ILF-parameter, for several values of the quantum well-width
with F = 0 and P = 0.
Duque et al. Nanoscale Research Letters 2012 7:492 doi:10.1186/1556-276X-7-492 |
