Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
1 Instituto de Física, Universidad de Antioquia, Medellin, AA 1226, Colombia
2 Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Ave. Universidad 1001, Morelos, CP 62209, Cuernavaca, Mexico
Nanoscale Research Letters 2012, 7:492 doi:10.1186/1556-276X-7-492Published: 31 August 2012
In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external influences as well as of the changes in the geometry of the heterostructure on the exciton binding energy are discussed in detail.