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Open Access Nano Express

Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields

Carlos M Duque1, Miguel E Mora-Ramos12 and Carlos A Duque1*

Author Affiliations

1 Instituto de Física, Universidad de Antioquia, Medellin, AA 1226, Colombia

2 Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Ave. Universidad 1001, Morelos, CP 62209, Cuernavaca, Mexico

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Nanoscale Research Letters 2012, 7:492  doi:10.1186/1556-276X-7-492

Published: 31 August 2012

Abstract

In this work, we study the exciton states in a zincblende InGaN/GaN quantum well using a variational technique. The system is considered under the action of intense laser fields with the incorporation of a direct current electric field as an additional external probe. The effects of these external influences as well as of the changes in the geometry of the heterostructure on the exciton binding energy are discussed in detail.

Keywords:
Nitrides; Excitons; Intense laser field; Quantum wells