Table 3

The values of the parameters used in the calculations
Sample Δ (nm) Λ (nm) Dislocation density (×1010cm−2)
Ga0.06In0.94 N 3.6 1.4 (four monolayer) 0.1
Ga0.32In0.68 N 6.4 3.4 (ten monolayer) 0.3
Ga0.52 In0.48 N 6.7 3.4 (ten monolayer) 3.8

Donmez et al.

Donmez et al. Nanoscale Research Letters 2012 7:490   doi:10.1186/1556-276X-7-490

Open Data