Table 3 |
|||
| The values of the parameters used in the calculations | |||
| Sample | Δ (nm) | Λ (nm) | Dislocation density (×1010 cm−2) |
| Ga0.06In0.94 N | 3.6 | 1.4 (four monolayer) | 0.1 |
| Ga0.32In0.68 N | 6.4 | 3.4 (ten monolayer) | 0.3 |
| Ga0.52 In0.48 N | 6.7 | 3.4 (ten monolayer) | 3.8 |
Donmez et al. Nanoscale Research Letters 2012 7:490 doi:10.1186/1556-276X-7-490
