Table 2 |
||
The formulas of major scattering mechanisms used in 2DEG mobility calculations | ||
Scattering mechanism | Formula | Definition of variables |
Acoustic phonon: piezoelectric [15-17] | K, electromagnetic coupling coefficient; J_{PE}(k), electron wave vector dependent integral. | |
Acoustic phonon: deformation [11,18] potential | ρ, crystal density; v_{s}, longitudinal acoustic phonon velocity; Ξ_{,} deformation potential constant; m*, electron effective mass; J_{DP}(k), electron wave vector dependent integral. b, Fang-Howard expression; q_{s}, reciprocal screening length; f(0), occupation probability; F_{11}(q), ground-state Fang-Howard wave function. | |
Polar optical phonon [17-19] | , polar optical phonon energy; and , high- and low-frequency dielectric constant; Z_{0}, effective width of triangular well formed at the Ga_{x}In_{1-x}N/GaN interface and is given in terms of Fermi wave vector. | |
Interface roughness [11,15,20] | Δ, lateral size of the roughness; _{Λ,} correlation length between fluctuations; J_{IFR}(k), correlation length and the lateral size-dependent integral; n_{2D}, 2D electron density. | |
Alloy disorder [20] | x, Ga fraction; Ω_{0}, the volume occupied by one atom; U_{A}, alloy potential. | |
Dislocation [21-23] | N_{Dis}, dislocation density per unit area which is taken as a fitting parameter; λ_{D}, Debye screening length; c, lattice constant of Ga_{x}In_{1-x}N. f, the fraction of filled traps that are assumed fully occupied. | |
Donmez et al.
Donmez et al. Nanoscale Research Letters 2012 7:490 doi:10.1186/1556-276X-7-490