Figure 1.

Morphology of the QDs. (a) An SEM image of the top surface of the InAs/GaAs(001) QDs; (b) a [<a onClick="popup('','MathML',630,470);return false;" target="_blank" href="">View MathML</a>] cross-sectional TEM image showing a relaxed InAs island on the GaAs(001) substrate. Line 1 and line 2 indicate the positions of the crystalline surface of the substrate and the surface of the dark amorphous layer, respectively. Three misfit dislocations in the relaxed island are marked with three white arrows.

Chen et al. Nanoscale Research Letters 2012 7:486   doi:10.1186/1556-276X-7-486
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