Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?

Zi-Bin Chen; Wen Lei; Bin Chen; Yan-Bo Wang; Xiao-Zhou Liao; Hoe H Tan; Jin Zou; Simon P Ringer; Chennupati Jagadish

doi:10.1186/1556-276X-7-486

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Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?

Zi-Bin Chen, Wen Lei, Bin Chen, Yan-Bo Wang, Xiao-Zhou Liao^*, Hoe H Tan, Jin Zou, Simon P Ringer and Chennupati Jagadish

* Corresponding author: Xiao-Zhou Liao xiaozhou.liao@sydney.edu.au

Nanoscale Research Letters 2012, 7:486 doi:10.1186/1556-276X-7-486

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Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?

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Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?