Table 1

Typical physical properties and figure of merits of candidate materials (300 K)
Materials S(μV/K) ρ(Ωm) κ(W/m K) ZT
Cr 18.8 1.27E − 7 93.9 8.9E − 3
Ni −18 7E − 8 90.9 1.5E − 2
Al −1.7 2.65E − 8 237 1.4E − 4
Sia Approximately −450 1.4 132 3.3E − 7
poly-Sia Approximately −1,200 0.36 135 8.9E − 6
n-poly-Sib −57 8.1E − 6 31.5 3.8E − 3
p-poly-Sib 103 2.2E − 5 31.2 4.6E − 3
n-poly-SiGeb −77 2.4E − 5 9.4 7.9E − 3
p-poly-SiGeb 59 1.9E − 5 11.1 5.0E − 3

aThe samples of Si and poly-Si have intrinsic N-type impurities [17]; bthe doping concentration was 2.5E20 atoms/cm3[18].

Liu et al.

Liu et al. Nanoscale Research Letters 2012 7:484   doi:10.1186/1556-276X-7-484

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