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The effects of porosity on optical properties of semiconductor chalcogenide films obtained by the chemical bath deposition

Yuri V Vorobiev1*, Paul P Horley2, Jorge Hernández-Borja1, Hilda E Esparza-Ponce2, Rafael Ramírez-Bon1, Pavel Vorobiev1, Claudia Pérez1 and Jesús González-Hernández2

Author Affiliations

1 CINVESTAV-IPN Unidad Querétaro, Libramiento Norponiente 2000, Fracc. Real de Juriquilla, Querétaro, Qro, CP 76230, México

2 CIMAV Chihuahua/Monterrey, Avenida Miguel de Cervantes 120, Chihuahua, Chih, CP 31109, México

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Nanoscale Research Letters 2012, 7:483  doi:10.1186/1556-276X-7-483

Published: 29 August 2012


This paper is dedicated to study the thin polycrystalline films of semiconductor chalcogenide materials (CdS, CdSe, and PbS) obtained by ammonia-free chemical bath deposition. The obtained material is of polycrystalline nature with crystallite of a size that, from a general point of view, should not result in any noticeable quantum confinement. Nevertheless, we were able to observe blueshift of the fundamental absorption edge and reduced refractive index in comparison with the corresponding bulk materials. Both effects are attributed to the material porosity which is a typical feature of chemical bath deposition technique. The blueshift is caused by quantum confinement in pores, whereas the refractive index variation is the evident result of the density reduction. Quantum mechanical description of the nanopores in semiconductor is given based on the application of even mirror boundary conditions for the solution of the Schrödinger equation; the results of calculations give a reasonable explanation of the experimental data.

polycrystalline films; chalcogenide materials; nanopores; quantum confinement in pores