Figure 1.

Phonon dispersion relations of the circular cross-section GaN/AlN NWSL. (a) R = 5.0 nm and D = 20.0 nm; (b) R = 5.0 nm and D = 45.0 nm (thicknesses of GaN and AlN layers are 25.0 and 20.0 nm, respectively). The B2 modes exist in higher frequency range, and all the E modes are doubly degenerated.

Mizuno Nanoscale Research Letters 2012 7:479   doi:10.1186/1556-276X-7-479
Download authors' original image