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Resolution: standard / high Figure 1.
Phonon dispersion relations of the circular cross-section GaN/AlN NWSL. (a) R = 5.0 nm and D = 20.0 nm; (b) R = 5.0 nm and D = 45.0 nm (thicknesses of GaN and AlN layers are 25.0 and 20.0 nm, respectively).
The B2 modes exist in higher frequency range, and all the E modes are doubly degenerated.
Mizuno Nanoscale Research Letters 2012 7:479 doi:10.1186/1556-276X-7-479 |
