Table 1 |
||||
| Si wafer characteristics and PS parameters | ||||
| Template number | Si wafer doping | Si wafer resistivity, ρ | Porosity of PS, p | Thickness of PS, d |
| (Ω·cm) | (%) | (μm) | ||
| PS1 | Antimony | 0.01 | 50 to 55 | 1 |
| PS2 | 80 to 85 | |||
| PS3 | 80 to 85 | 7 | ||
| PS4 | Boron | 0.3 | 60 to 65 | 2.5 to 3 |
Bandarenka et al. Nanoscale Research Letters 2012 7:477 doi:10.1186/1556-276X-7-477