Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces
1 Institute of Semiconductor Physics, Lavrentjevav 13, Novosibirsk 630090, Russia
2 Novosibirsk State University, Pirogovstr 2, Novosibirsk 630090, Russia
3 Semiconductor Physics, Chemnitz University of Technology, Chemnitz, D-09107, Germany
Nanoscale Research Letters 2012, 7:476 doi:10.1186/1556-276X-7-476Published: 23 August 2012
We present a comparative analysis of Raman scattering by acoustic and optical phonons in InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces. Doublets of folded longitudinal acoustic phonons up to the fifth order were observed in the Raman spectra of (001)- and (311)B-oriented quantum dot superlattices measured in polarized scattering geometries. The energy positions of the folded acoustic phonons are well described by the elastic continuum model. Besides the acoustic phonons, the spectra display features related to confined transverse and longitudinal optical as well as interface phonons in quantum dots and spacer layers. Their frequency positions are discussed in terms of phonon confinement, elastic stress, and atomic intermixing.