Figure 4.

TEM images of the cross-section of the InN/GaN. (a) Cross-sectional TEM image of InN; (b) SAD pattern of typical InN/GaN interface; (c) image of 1attices of InN; and (d) high-resolution transmission electron microscopy of InN on GaN showing the interface and the corresponding fast-Fourier-transform pattern.

Chen et al. Nanoscale Research Letters 2012 7:468   doi:10.1186/1556-276X-7-468
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