Figure 3.

SEM cross-sectional images of InN film/nanorods by RF-MOMBE in a 4-μm thick GaN template. (a) The thickness of the film was approximately 1.7 μm with a growth rate of approximately 0.85 μm/h (b) Nanorods formed a cone-shaped columnar structure with separated InN columns.

Chen et al. Nanoscale Research Letters 2012 7:468   doi:10.1186/1556-276X-7-468
Download authors' original image