Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE
1 Instrument Technology Research Center, National Applied Research Laboratories, 20 R&D Road V1, Hsinchu Science Park, Hsinchu, Taiwan, 300, Republic of China
2 Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan, 333, Republic of China
3 Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, 1001 University Road, Hsinchu, Taiwan, 300, Republic of China
4 Department of Photonics Engineering, Yuan Ze University, Taiwan, 135 Yuan-Tung Road, Chung-Li, Taiwan, 32003, Republic of China
Nanoscale Research Letters 2012, 7:468 doi:10.1186/1556-276X-7-468Published: 21 August 2012
This paper reports on high-quality InN materials prepared on a GaN template using radio-frequency metalorganic molecular beam epitaxy. We also discuss the structural and electro-optical properties of InN nanorods/films. The X-ray diffraction peaks of InN(0002) and InN(0004) were identified from their spectra, indicating that the (0001)-oriented hexagonal InN was epitaxially grown on the GaN template. Scanning electron microscopic images of the surface morphology revealed a two-dimensional growth at a rate of approximately 0.85 μm/h. Cross-sectional transmission electron microscopy images identified a sharp InN/GaN interface and a clear epitaxial orientation relationship of InN // GaN and ( )InN // ( )GaN. The optical properties of wurtzite InN nanorods were determined according to the photoluminescence, revealing a band gap of 0.77 eV.