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Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE

Wei-Chun Chen1*, Shou-Yi Kuo2*, Wei-Lin Wang3, Jr-Sheng Tian3, Woei-Tyng Lin4, Fang-I Lai4 and Li Chang3

Author Affiliations

1 Instrument Technology Research Center, National Applied Research Laboratories, 20 R&D Road V1, Hsinchu Science Park, Hsinchu, Taiwan, 300, Republic of China

2 Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan, 333, Republic of China

3 Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, 1001 University Road, Hsinchu, Taiwan, 300, Republic of China

4 Department of Photonics Engineering, Yuan Ze University, Taiwan, 135 Yuan-Tung Road, Chung-Li, Taiwan, 32003, Republic of China

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Nanoscale Research Letters 2012, 7:468  doi:10.1186/1556-276X-7-468

Published: 21 August 2012


This paper reports on high-quality InN materials prepared on a GaN template using radio-frequency metalorganic molecular beam epitaxy. We also discuss the structural and electro-optical properties of InN nanorods/films. The X-ray diffraction peaks of InN(0002) and InN(0004) were identified from their spectra, indicating that the (0001)-oriented hexagonal InN was epitaxially grown on the GaN template. Scanning electron microscopic images of the surface morphology revealed a two-dimensional growth at a rate of approximately 0.85 μm/h. Cross-sectional transmission electron microscopy images identified a sharp InN/GaN interface and a clear epitaxial orientation relationship of [0001]InN // [0001]GaN and ( <a onClick="popup('','MathML',630,470);return false;" target="_blank" href="">View MathML</a>)InN // ( <a onClick="popup('','MathML',630,470);return false;" target="_blank" href="">View MathML</a>)GaN. The optical properties of wurtzite InN nanorods were determined according to the photoluminescence, revealing a band gap of 0.77 eV.

RF-MOMBE; InN; nanorods