Table 2
Device model specification at  V  GS  = 1 V
Parameter	CNTFET benchmarking
	CNTFET	MOSFET
Channel length, L	50 nm	45 nm
Contact width, Wcontact	100 nm	-
Channel width, W	-	125 nm
Channel area	5 × 10−15 m2	5.63 × 10−15 m2
Nanotube diameter	1.5437 nm	-
Chiral vector [n,m]	[20,0]	-
Maximum current, Idmax	46.56 μA	50.20 μA
Transconductance, gm	68.1 μS	148 μS
Carrier density, Idmax / [d or W]	30.16 μA/nm	0.40 μA/nm
Gate capacitance, CG	14.85 aF	65.8 aF
Drain capacitance, Cd	0.59 aF	19.0 aF
Source capacitance, Cs	1.43 aF	78.7 aF
Substrate capacitance, Csub	1.60 aF	6.52 aF
Total terminal capacitance, Cter	18.47 aF	209.02 aF
Intrinsic capacitance, Cint = Cgd + Cdb	21.29 aF	37.40 aF
Load capacitance, CL at 1 GHz	46.54 fF	50.13 fF
Cutoff frequency with 5-μm wire	13.57 GHz	27.72 GHz
Drain-induced barrier lowering	40.85 mV/V	83.89 mV/V
Subthreshold swing	72.3 mV/decade	113.67 mV/decade
On-off ratio	2.99 × 104	9.54 × 106

Tan et al. Nanoscale Research Letters 2012 7:467   doi:10.1186/1556-276X-7-467