Table 1
Source and drain capacitance for multiple substrate insulator thickness
Substrate insulator thickness (nm)	C sb or  C db(aF)	I ds (μA) at  V  G = 1 V
10	34.53	47.395
50	6.906	47.340
100	3.453	47.272
200	1.727	47.135
300	1.151	46.998
400	0.863	46.860
500	0.691	46.723

Tan et al. Nanoscale Research Letters 2012 7:467   doi:10.1186/1556-276X-7-467