Figure 4.

I-V characteristic of SWCNT model, semiconducting and metallic CNT experimental data.IV characteristic of a 50-nm SWCNT model (dotted lines) demonstrated in comparison to L ≈ 50 nm semiconducting CNT experimental data (filled diamond). Metallic CNT experimental data are also shown (filled circle). Inset shows 45-nm MOSFET characteristics where the dimension is given in Table 2. Initial VG at the top for CNT and MOSFET is 1 V with 0.1-V steps. (Adapted from [10]).

Tan et al. Nanoscale Research Letters 2012 7:467   doi:10.1186/1556-276X-7-467
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