Figure 2.

Simulated CNT drain characteristic versus 80-nm experimental data. Simulated single-subband CNT drain characteristic (solid lines) versus 80-nm experimental data with high-potassium (K)-doped source and drain doping (filled diamond) at VG = 0 to 1.0 V in 0.2-V steps. (Adapted from [9]).

Tan et al. Nanoscale Research Letters 2012 7:467   doi:10.1186/1556-276X-7-467
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