Simulated CNT drain characteristic versus 80-nm experimental data. Simulated single-subband CNT drain characteristic (solid lines) versus 80-nm experimental data with high-potassium (K)-doped source and drain doping (filled diamond) at VG = 0 to 1.0 V in 0.2-V steps. (Adapted from ).
Tan et al. Nanoscale Research Letters 2012 7:467 doi:10.1186/1556-276X-7-467