Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon
1 Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie (CRTEn), Technopôle de Borj-Cédria, BP 95, Hammam-Lif, 2050, Tunisia
2 Institut Supérieur d’Electronique et de Communication de Sfax (ISECS), Route Menzel Chaker Km 0.5, BP 868, Sfax, 3018, Tunisia
Citation and License
Nanoscale Research Letters 2012, 7:464 doi:10.1186/1556-276X-7-464Published: 17 August 2012
Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.